Semiconductor photodetector with internal reflector
BLAUVELT, HENRY A.; LEE, HAO; VERNOOY, DAVID W.
著作权人XPONENT PHOTONICS INC.
专利号AU2003270519A1
国家澳大利亚
文献子类发明申请
其他题名Semiconductor photodetector with internal reflector
英文摘要A photodetector comprises a semiconductor substrate with entrance and reflecting faces formed at the substrate upper surface. The reflecting face forms an acute angle with the substrate surface and is positioned so that an optical beam transmitted through the entrance face into the substrate is internally reflected from the reflecting face toward the substrate upper surface. A photodetector active region is formed on the substrate upper surface and is positioned so that the reflected optical beam impinges on the active region. The photodetector may be mounted on a second substrate for receiving an optical beam from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.
公开日期2004-05-04
申请日期2003-09-12
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/43466]  
专题半导体激光器专利数据库
作者单位XPONENT PHOTONICS INC.
推荐引用方式
GB/T 7714
BLAUVELT, HENRY A.,LEE, HAO,VERNOOY, DAVID W.. Semiconductor photodetector with internal reflector. AU2003270519A1.
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