Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier

	Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
	Kong, Xin ; Wei, Ke ; Liu, Guoguo ; Liu, Xinyu ; Wang, Cuimei ; Wang, Xiaoliang
刊名	applied physics express
	2013
卷号	6 期号:5 页码:051201
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-08-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24274]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Kong, Xin,Wei, Ke,Liu, Guoguo,et al. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier[J]. applied physics express,2013,6(5):051201.
APA	Kong, Xin,Wei, Ke,Liu, Guoguo,Liu, Xinyu,Wang, Cuimei,&Wang, Xiaoliang.(2013).Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier.applied physics express,6(5),051201.
MLA	Kong, Xin,et al."Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier".applied physics express 6.5(2013):051201.