Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

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	Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators
	Zhang YX (Zhang Yun-Xiao) ; Liao ZY (Liao Zai-Yi) ; Zhao LJ (Zhao Ling-Juan) ; Pan JQ (Pan Jiao-Qing) ; Zhu HL (Zhu Hong-Liang) ; Wang W (Wang Wei)
刊名	chinese physics b
	2010
卷号	19 期号:7 页码:art. no. 074216
关键词	electroabsorption modulator intra-step quantum wells uni-traveling-carrier RF-gain WAVELENGTH CONVERSION WAVE-GUIDE
通讯作者	zhang, yx, chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china. 电子邮箱地址: zhangyx@semi.ac.cn
合作状况	其它
英文摘要	we report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (ec-utc-pds) and intra-step quantum well electroabsorption modulators (iqw-eams) on n-inp substrates. these devices exhibit simultaneously 2.1 ghz and -16.2 db rf-gain at 21 ghz with a 450 omega thin-film resistor and a bypass capacitor integrated on a chip.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:36:30z no. of bitstreams: 1 monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:26:41z (gmt) no. of bitstreams: 1 monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (md5); made available in dspace on 2010-08-17t02:26:41z (gmt). no. of bitstreams: 1 monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (md5) previous issue date: 2010; project supported by the national high technology research and development of china (grant nos. 2006aa01z256, 2007aa03z419 and 2007aa03z417), the state key development program for basic research of china (grant nos. 2006cb604901 and 2006cb604902), and the national natural science foundation of china (grant nos. 90401025, 60736036, 60706009 and 60777021).; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	project supported by the national high technology research and development of china (grant nos. 2006aa01z256, 2007aa03z419 and 2007aa03z417), the state key development program for basic research of china (grant nos. 2006cb604901 and 2006cb604902), and the national natural science foundation of china (grant nos. 90401025, 60736036, 60706009 and 60777021).
语种	英语
公开日期	2010-08-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13484]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang YX ,Liao ZY ,Zhao LJ ,et al. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators[J]. chinese physics b,2010,19(7):art. no. 074216.
APA	Zhang YX ,Liao ZY ,Zhao LJ ,Pan JQ ,Zhu HL ,&Wang W .(2010).Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.chinese physics b,19(7),art. no. 074216.
MLA	Zhang YX ,et al."Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators".chinese physics b 19.7(2010):art. no. 074216.