Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

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	Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress
	Ding F ; Singh R ; Plumhof JD ; Zander T ; Krapek V ; Chen YH ; Benyoucef M ; Zwiller V ; Dorr K ; Bester G ; Rastelli A ; Schmidt OG
刊名	physical review letters
	2010
卷号	104 期号:6 页码:art. no. 067405
通讯作者	ding, f, ifw dresden, inst integrat nanosci, helmholtzstr 20, d-01069 dresden, germany. e-mail address: f.ding@ifw-dresden.de ; g.bester@fkf.mpg.de ; a.rastelli@ifw-dresden.de
合作状况	国际
英文摘要	we study the effect of an external biaxial stress on the light emission of single ingaas/gaas(001) quantum dots placed onto piezoelectric actuators. with increasing compression, the emission blueshifts and the binding energies of the positive trion (x+) and biexciton (xx) relative to the neutral exciton (x) show a monotonic increase. this phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of x and xx, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering'' scheme.; submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2010-04-21t16:32:12z no. of bitstreams: 1 tuning the exciton binding energies in single self-assembled ingaasgaas quantum dots by piezoelectric-induced biaxial stress.pdf: 1153928 bytes, checksum: 9c0f8d5bb640a1240c8fecd704bd8cf6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-21t16:45:37z (gmt) no. of bitstreams: 1 tuning the exciton binding energies in single self-assembled ingaasgaas quantum dots by piezoelectric-induced biaxial stress.pdf: 1153928 bytes, checksum: 9c0f8d5bb640a1240c8fecd704bd8cf6 (md5); made available in dspace on 2010-04-21t16:45:37z (gmt). no. of bitstreams: 1 tuning the exciton binding energies in single self-assembled ingaasgaas quantum dots by piezoelectric-induced biaxial stress.pdf: 1153928 bytes, checksum: 9c0f8d5bb640a1240c8fecd704bd8cf6 (md5) previous issue date: 2010; dfg for730; bmbf 01bm459 ;nwo (vidi) ; cas-mpg; nsfc china 60625402; 国际
学科主题	半导体材料
收录类别	SCI
资助信息	dfg for730; bmbf 01bm459 ;nwo (vidi) ; cas-mpg; nsfc china 60625402
语种	英语
公开日期	2010-04-21
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11170]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ding F,Singh R,Plumhof JD,et al. Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress[J]. physical review letters,2010,104(6):art. no. 067405.
APA	Ding F.,Singh R.,Plumhof JD.,Zander T.,Krapek V.,...&Schmidt OG.(2010).Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress.physical review letters,104(6),art. no. 067405.
MLA	Ding F,et al."Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress".physical review letters 104.6(2010):art. no. 067405.