Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Circuit design and simulation of a CMOS-based preamplifier for brain neural signals
	Sui XH ; Pei WH ; Gu M ; Liu JB ; Chen HD
	2005
会议名称	1st international conference on neural interface and control (cnic)
会议日期	may 26-28, 2005
会议地点	wuhan, peoples r china
关键词	BCI
页码	108-110
通讯作者	sui, xh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	a novel cmos-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (bci) is presented in this paper. by means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pf are included to realize the dc suppression compared to conventional preamplifiers. then this preamplifier is designed and simulated using the standard 0.6 mu m mos process technology model parameters with a supply voltage of 5 volts. with differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 gohm with brain neural signal frequency of 0.5 hz-100 hz. the equivalent input noise voltage is 18 nv/hz(1/2). the common mode rejection ratio (cmrr) of 112 db and the open-loop differential gain of 90 db are achieved.
英文摘要	a novel cmos-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (bci) is presented in this paper. by means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pf are included to realize the dc suppression compared to conventional preamplifiers. then this preamplifier is designed and simulated using the standard 0.6 mu m mos process technology model parameters with a supply voltage of 5 volts. with differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 gohm with brain neural signal frequency of 0.5 hz-100 hz. the equivalent input noise voltage is 18 nv/hz(1/2). the common mode rejection ratio (cmrr) of 112 db and the open-loop differential gain of 90 db are achieved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; huazhong univ sci & technol.; arizona state univ.; tsinghua univ.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	huazhong univ sci & technol.; arizona state univ.; tsinghua univ.
会议录	2005 first international conference on neural interface and control proceedings
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	0-7803-8902-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10124]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sui XH,Pei WH,Gu M,et al. Circuit design and simulation of a CMOS-based preamplifier for brain neural signals[C]. 见:1st international conference on neural interface and control (cnic). wuhan, peoples r china. may 26-28, 2005.