1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector

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	1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector
	Li CB ; Cheng BW ; Mao RW ; Zuo YH ; Yu JZ ; Wang QM
	2005
会议名称	conference on optoelectronic devices and integration
会议日期	nov 08-11, 2004
会议地点	beijing, peoples r china
关键词	WAVE-GUIDE PHOTODETECTOR
页码	pts 1 and 2 5644: 465-471 part 1-2
通讯作者	li, cb, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	the high quality ge islands material with 1.55 mu m photo-response grown on sol substrate is reported. due to the modulation of the cavity formed by the mirrors at the surface and the buried sio2 interface, seven sharp and strong peaks with narrow linewidth are found. and a 1.55 mu m ge islands resonant-cavity-enhanced (rce) detector with narrowband was fabricated by a simple method. the bottom mirror was deposited in the hole formed by anisotropically etching, in a basic solution from the backside of the sample with the buried sio2 layer in silicon-on-insulator substrate as the etch-stop layer. reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mu m. the peak responsivity of the rce detector at 1543.8 nm is 0.028 ma/w and a full width at half maximum of 5 nm is obtained. compared with the conventional p-i-n photodetector, the responsivity of rce detector has a nearly threefold enhancement.
英文摘要	the high quality ge islands material with 1.55 mu m photo-response grown on sol substrate is reported. due to the modulation of the cavity formed by the mirrors at the surface and the buried sio2 interface, seven sharp and strong peaks with narrow linewidth are found. and a 1.55 mu m ge islands resonant-cavity-enhanced (rce) detector with narrowband was fabricated by a simple method. the bottom mirror was deposited in the hole formed by anisotropically etching, in a basic solution from the backside of the sample with the buried sio2 layer in silicon-on-insulator substrate as the etch-stop layer. reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mu m. the peak responsivity of the rce detector at 1543.8 nm is 0.028 ma/w and a full width at half maximum of 5 nm is obtained. compared with the conventional p-i-n photodetector, the responsivity of rce detector has a nearly threefold enhancement.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese opt soc.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	spie.; chinese opt soc.
会议录	optoelectronic devices and integration丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-5599-7
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10074]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li CB,Cheng BW,Mao RW,et al. 1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector[C]. 见:conference on optoelectronic devices and integration. beijing, peoples r china. nov 08-11, 2004.