Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

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	Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well
	Fan WJ ; Abiyasa AP ; Tan ST ; Yu SF ; Sun XW ; Xia JB ; Yeo YC ; Li MF ; Chong TC
	2006
会议名称	3rd international conference on materials for advanced technologies (icmat-2005)/9th international conference on advanced materials (icam 2005)
会议日期	jul 03-08, 2005
会议地点	singapore, singapore
关键词	computer simulation
页码	287 (1): 28-33
通讯作者	fan, wj, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
中文摘要	the band structures of wurtzite zno are calculated using the empirical pseudopotential method (epm). the 8 parameters of the zn and o atom pesudopotential form factors with schluter's formula are obtained. the effective mass parameters are extracted by using k.p hamiltonian to fit the epm results. the calculated band edge energies (e-g, e-a, e-b, and e-c) at gamma point are in good agreement with experimental results. the ordering of zno at the top of valence band is found to be a(gamma(7))-b(gamma(9))-c(gamma(7)) due to a negative spin-orbit (so) splitting. based on the band parameters obtained, the valence hole subbands of wurzite zno/mgxzn1-xo tensile-strained quantum wells (qws) with different well widths and mg compositions are calculated using 6-band k.p method. (c) 2005 elsevier b.v. all rights reserved.
英文摘要	the band structures of wurtzite zno are calculated using the empirical pseudopotential method (epm). the 8 parameters of the zn and o atom pesudopotential form factors with schluter's formula are obtained. the effective mass parameters are extracted by using k.p hamiltonian to fit the epm results. the calculated band edge energies (e-g, e-a, e-b, and e-c) at gamma point are in good agreement with experimental results. the ordering of zno at the top of valence band is found to be a(gamma(7))-b(gamma(9))-c(gamma(7)) due to a negative spin-orbit (so) splitting. based on the band parameters obtained, the valence hole subbands of wurzite zno/mgxzn1-xo tensile-strained quantum wells (qws) with different well widths and mg compositions are calculated using 6-band k.p method. (c) 2005 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; int union mat res soc.; mat res soc singapore.; suntec int convent & exhibit ctr.; nanyang technol univ, sch elect & elect engn, singapore 639798, singapore; chinese acad sci, inst semicond, beijing 10083, peoples r china; natl univ singapore, dept elect & comp engn, singapore 119260, singapore
收录类别	其他
会议主办者	int union mat res soc.; mat res soc singapore.; suntec int convent & exhibit ctr.
会议录	journal of crystal growth
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10050]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fan WJ,Abiyasa AP,Tan ST,et al. Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well[C]. 见:3rd international conference on materials for advanced technologies (icmat-2005)/9th international conference on advanced materials (icam 2005). singapore, singapore. jul 03-08, 2005.