Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

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	Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
	Liao, XB (Liao, Xianbo) ; Du, WH (Du, Wenhui) ; Yang, XS (Yang, Xiesen) ; Povolny, H (Povolny, Henry) ; Xiang, XB (Xiang, Xianbi) ; Deng, XM (Deng, Xunming) ; Sun, K (Sun, Kai)
	2006
会议名称	21st international conference on amorphous and nanocrystalline semiconductors
会议日期	sep 04-09, 2005
会议地点	lisbon, portugal
关键词	amorphous semiconductors
页码	352 (9-20): 1841-1846
通讯作者	liao, xb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xbliao2003@yahoo.com
中文摘要	the open circuit voltage (v-oc) of n-i-p type hydrogenated amorphous silicon (a-si:h) solar cells has been examined by means of experimental and numerical modeling. the i- and p-layer limitations on v-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using raman spectroscopy, high resolution transmission electron microscopy (hrtem), optical transmittance and activation energy of dark-conductivity. the n-i-p a-si:h solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of v-oc from 1.042 v to 0.369 v, under identical i- and n-layer conditions. it is found that the nanocrystalline silicon (nc-si:h) p-layer with a certain nanocrystalline volume fraction leads to a higher v-oc. the optimum p-layer material for n-i-p type a-si:h solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 elsevier b.v. all rights reserved.
英文摘要	the open circuit voltage (v-oc) of n-i-p type hydrogenated amorphous silicon (a-si:h) solar cells has been examined by means of experimental and numerical modeling. the i- and p-layer limitations on v-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using raman spectroscopy, high resolution transmission electron microscopy (hrtem), optical transmittance and activation energy of dark-conductivity. the n-i-p a-si:h solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of v-oc from 1.042 v to 0.369 v, under identical i- and n-layer conditions. it is found that the nanocrystalline silicon (nc-si:h) p-layer with a certain nanocrystalline volume fraction leads to a higher v-oc. the optimum p-layer material for n-i-p type a-si:h solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; univ toledo, dept phys & astron, toledo, oh 43606 usa; univ michigan, electron microbeam anal lab, ann arbor, mi 48109 usa
收录类别	其他
会议录	journal of non-crystalline solids
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-3093
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10008]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liao, XB ,Du, WH ,Yang, XS ,et al. Nanostructure in the p-layer and its impacts on amorphous silicon solar cells[C]. 见:21st international conference on amorphous and nanocrystalline semiconductors. lisbon, portugal. sep 04-09, 2005.