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	Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
	Xu B; Jin P; Ye XL
	2004
会议名称	13th international conference on semiconducting and insulating materials (simc xiii)
会议日期	sep 20-25, 2004
会议地点	beijing, peoples r china
关键词	1.3 MU-M
页码	135-138
通讯作者	shi, gx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	the effect of thermal annealing of inas/gaas quantum dots (qds) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (pl) and transmission electron microscopy (tem measurements. there is a dramatic change in the a spectra when the annealing temperature is raised up to 800 degrees c: an accelerated blushifit of the main emission peak of qds together with an inhomogeneous broadening of the linewidth. the tem images shows that the lateral size of normal qds decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. a small fraction of the relative large qds contain dislocations when the annealing temperature increases up to 800 degrees c. the latter leads to the strong decrease of the pl intensity.
英文摘要	the effect of thermal annealing of inas/gaas quantum dots (qds) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (pl) and transmission electron microscopy (tem measurements. there is a dramatic change in the a spectra when the annealing temperature is raised up to 800 degrees c: an accelerated blushifit of the main emission peak of qds together with an inhomogeneous broadening of the linewidth. the tem images shows that the lateral size of normal qds decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. a small fraction of the relative large qds contain dislocations when the annealing temperature increases up to 800 degrees c. the latter leads to the strong decrease of the pl intensity.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.
会议录	smic-xiii 2004 13th international conference on semiconducting & insulating materials
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8668-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9920]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Jin P,Ye XL. Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004.

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