Recent progresses of SOI-based photonic devices - art. no. 60201R

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Recent progresses of SOI-based photonic devices - art. no. 60201R
	Li YT; Li ZY
	2005
会议名称	conference on optoelectronic materials and devices for optical communications
会议日期	nov 07-10, 2005
会议地点	shanghai, peoples r china
关键词	SOI
页码	6020: r201-r201
通讯作者	yu, jz, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	soi (silicon on insulator) based photonic devices, including stimulated emission from si diode, rce (resonant cavity enhanced) photodiode with quantum structure, mos (metal oxide semiconductor) optical modulator with high frequency, soi optical matrix switch and wavelength tunable filter are reviewed in the paper. the emphasis will be played on our recent results of soi-based thermo-optic waveguide matrix switch with low insertion loss and fast response. a folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (tir) mirrors and a first blocking 16 x 16 matrix were fabricated on soi wafer. the extinction ratio and the crosstalk are better. the insertion loss and the polarization dependent loss (pdl) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. the insertion losses are expected to decrease 2-3 db when anti-reflection films are added in the ends of the devices. the rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
英文摘要	soi (silicon on insulator) based photonic devices, including stimulated emission from si diode, rce (resonant cavity enhanced) photodiode with quantum structure, mos (metal oxide semiconductor) optical modulator with high frequency, soi optical matrix switch and wavelength tunable filter are reviewed in the paper. the emphasis will be played on our recent results of soi-based thermo-optic waveguide matrix switch with low insertion loss and fast response. a folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (tir) mirrors and a first blocking 16 x 16 matrix were fabricated on soi wafer. the extinction ratio and the crosstalk are better. the insertion loss and the polarization dependent loss (pdl) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. the insertion losses are expected to decrease 2-3 db when anti-reflection films are added in the ends of the devices. the rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议主办者	spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol.
会议录	optoelectronic materials and devices for optical communications丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-6051-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9900]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li YT,Li ZY. Recent progresses of SOI-based photonic devices - art. no. 60201R[C]. 见:conference on optoelectronic materials and devices for optical communications. shanghai, peoples r china. nov 07-10, 2005.