A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier
Chen HD (Chen Hongda) ; Gu M (Gu Ming) ; Huang JL (Huang Jiale) ; Gao P (Gao Peng) ; Mao LH (Mao Luhong)
2005
会议名称ieee conference on electron devices and solid-state circuits
会议日期dec 19-21, 2005
会议地点kowloon, peoples r china
页码proceedings: 721-724
通讯作者chen, hd, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要a 1ghz monolithic photo-detector (pd) and trans-impedance amplifier (tia) is designed with the standard 0.35 mu m cmos technique. the design of the photo-detector is analyzed and the cmos trans-impedance amplifier is also analyzed in the paper. the integrating method is described too. the die photograph is also showed in the paper.
英文摘要a 1ghz monolithic photo-detector (pd) and trans-impedance amplifier (tia) is designed with the standard 0.35 mu m cmos technique. the design of the photo-detector is analyzed and the cmos trans-impedance amplifier is also analyzed in the paper. the integrating method is described too. the die photograph is also showed in the paper.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; ieee solid state circuits soc.; ieee hong kong sect.; kc wong educ fdn.; solomon systech ltd.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别其他
会议主办者ieee electron devices soc.; ieee solid state circuits soc.; ieee hong kong sect.; kc wong educ fdn.; solomon systech ltd.
会议录2005 ieee conference on electron devices and solid-state circuits丛书标题: ieee conference on electron devices and solid-state circuits
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地345 e 47th st, new york, ny 10017 usa
学科主题光电子学
语种英语
ISBN号978-0-7803-9339-4
内容类型会议论文
源URL[http://ir.semi.ac.cn/handle/172111/9866]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen HD ,Gu M ,Huang JL ,et al. A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier[C]. 见:ieee conference on electron devices and solid-state circuits. kowloon, peoples r china. dec 19-21, 2005.
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