Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 能量转换材料重点实验室 > 期刊论文

	Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering
	Song, Junqiang; Chen, Xihong; Tang, Yunshan; Yao, Qin; Chen, Lidong
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2012-11-01
卷号	41 期号:11 页码:3068-3072
关键词	Thermoelectric bismuth telluride sputtering thin film post-annealing
其他题名	Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering
通讯作者	Chen, LD
英文摘要	p-Type Bi0.45Sb1.55Te3 thermoelectric (TE) thin films have been prepared at room temperature by a magnetron cosputtering process. The effect of postannealing on the microstructure and TE properties of Bi0.45Sb1.55Te3 films has been investigated in the temperature range from room temperature to 350A degrees C. x-Ray diffraction analysis shows that the annealed films have polycrystalline rhombohedral crystal structure, and the average grain size increases from 36 nm to 64 nm with increasing annealing temperature from room temperature to 350A degrees C. Electron probe microanalysis shows that annealing above 250A degrees C can cause Te reevaporation, which induces porous thin films and dramatically affects electrical transport properties of the thin films. TE properties of the films have been investigated at room temperature. The hole concentration shows a trend from descent to ascent and has a minimum value at the annealing temperature of 200A degrees C, while the Seebeck coefficient shows an opposite trend and a maximum value of 245 mu V K-1. The electrical resistivity monotonically decreases from 19.8 m Omega cm to 1.4 m Omega cm with increasing annealing temperature. Correspondingly, a maximum value of power factor, 27.4 mu W K-2 cm(-1), was obtained at the annealing temperature of 250A degrees C.
学科主题	无机非金属材料
WOS标题词	Science & Technology ; Technology ; Physical Sciences
类目[WOS]	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Engineering ; Materials Science ; Physics
关键词[WOS]	FLASH EVAPORATION METHOD ; ANTISITE DEFECTS ; BULK ALLOYS ; FABRICATION ; PERFORMANCE ; DEVICES ; MERIT
收录类别	SCI
语种	英语
WOS记录号	WOS:000309677200014
公开日期	2013-07-19
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/3562]
专题	上海硅酸盐研究所_能量转换材料重点实验室_期刊论文
作者单位	Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Song, Junqiang,Chen, Xihong,Tang, Yunshan,et al. Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering[J]. JOURNAL OF ELECTRONIC MATERIALS,2012,41(11):3068-3072.
APA	Song, Junqiang,Chen, Xihong,Tang, Yunshan,Yao, Qin,&Chen, Lidong.(2012).Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering.JOURNAL OF ELECTRONIC MATERIALS,41(11),3068-3072.
MLA	Song, Junqiang,et al."Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering".JOURNAL OF ELECTRONIC MATERIALS 41.11(2012):3068-3072.