High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer | |
Yan, JC ; Wang, JX ; Liu, Z ; Liu, NX ; Li, JM | |
2008 | |
会议名称 | 9th international conference on solid-state and integrated-circuit technology |
会议日期 | oct 20-23, 2008 |
会议地点 | beijing, peoples r china |
关键词 | DIODES |
页码 | vols 1-4: 714-717 |
通讯作者 | yan, jc, chinese acad sci, inst semicond, r&d ctr semicond lighting, pob 912, beijing 100083, peoples r china. |
中文摘要 | when algan is grown on gan template, crack networks invariably generate when the thickness of the algan layers over gan exceeds the critical value. we used thin high temperature deposited aln layer (ht-aln) as the interlayer between gan template and algan epilayer which was very effective in eliminating the cracks in algan epilayer. algan layers with high al mole fractions were also grown. characterization showed that the crystalline quality of algan epilayer was fairly good even when the at mole fraction was high. |
英文摘要 | when algan is grown on gan template, crack networks invariably generate when the thickness of the algan layers over gan exceeds the critical value. we used thin high temperature deposited aln layer (ht-aln) as the interlayer between gan template and algan epilayer which was very effective in eliminating the cracks in algan epilayer. algan layers with high al mole fractions were also grown. characterization showed that the crystalline quality of algan epilayer was fairly good even when the at mole fraction was high.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:14z (gmt). no. of bitstreams: 1 277.pdf: 3432728 bytes, checksum: a7c044cf9104336edf947d9b167e65d1 (md5) previous issue date: 2008; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [yan, jianchang; wang, junxi; liu, zhe; liu, naixin; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter. |
会议录 | 2008 9th international conference on solid-state and integrated-circuit technology |
会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
学科主题 | 半导体材料 |
语种 | 英语 |
ISBN号 | 978-1-4244-2185-5 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8280] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yan, JC,Wang, JX,Liu, Z,et al. High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008. |
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