The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

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	The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells
	Shi, MJ ; Wang, ZG ; Zhang, C ; Peng, WB ; Zeng, XB ; Diao, HW ; Kong, GL ; Liao, XB
	2007
会议名称	solar world congress of the international-solar-energy-society
会议日期	sep 18-21, 2007
会议地点	beijing, peoples r china
页码	solar energy and human settlement vols i-v: 1210-1214
通讯作者	shi, mj, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. as n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.the properties of the n/p junction of amorphous silicon (a-si) were studied. we investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. the crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-si) p(+) layer could be modulated by changing the deposition parameters.current transport in a-si based n/p ("tunnel") junctions was investigated by current-voltage measurements. the voltage dependence on the resistance (v/j) of the tandem cells was examined to see if n/p junction was ohmic contact. to study the affection of different doping concentration to the properties of the nc-si p(+) layers which varied the properties of the tunnel junctions, three nc-si p(+) film samples were grown, measured and analyzed.
英文摘要	tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. as n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.the properties of the n/p junction of amorphous silicon (a-si) were studied. we investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. the crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-si) p(+) layer could be modulated by changing the deposition parameters.current transport in a-si based n/p ("tunnel") junctions was investigated by current-voltage measurements. the voltage dependence on the resistance (v/j) of the tandem cells was examined to see if n/p junction was ohmic contact. to study the affection of different doping concentration to the properties of the nc-si p(+) layers which varied the properties of the tunnel junctions, three nc-si p(+) film samples were grown, measured and analyzed.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:59z (gmt). no. of bitstreams: 1 716.pdf: 137225 bytes, checksum: 23a39cd08df8c78c50f755498cc92c65 (md5) previous issue date: 2007; int solar energy soc.; [shi mingji; wang zhanguo; zhang changsha; peng wenbo; zeng xiangbo; diao hongwei; kong guanglin; liao xianbo] chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	int solar energy soc.
会议录	proceedings of ises solar world congress 2007
会议录出版者	tsinghua university press ; tsinghua university haidianqu, beijing 100084, peoples r china
会议录出版地	tsinghua university haidianqu, beijing 100084, peoples r china
学科主题	半导体材料
语种	英语
ISBN号	978-7-302-16146-2
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7868]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shi, MJ,Wang, ZG,Zhang, C,et al. The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells[C]. 见:solar world congress of the international-solar-energy-society. beijing, peoples r china. sep 18-21, 2007.