Material transport in self-assembled InAs/GaAs quantum dot ensemble

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	Material transport in self-assembled InAs/GaAs quantum dot ensemble
	Han PD
刊名	physics of low-dimensional structures
	1997
卷号	12 期号:0 页码:205-211
关键词	GROWTH TRANSITION GAAS
ISSN号	0204-3467
通讯作者	wang zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	introducing the growth interruption between the inas deposition and subsequent gaas growth in self-assembled quantum dot (qd) structures, the material transport process in the inas layers has been investigated by photoluminescence and transmission electron microscopy measurement. inas material in structures without misfit dislocations transfers from the wetting layer to qds corresponding to the red-shift of pl peak energy due to interruption. on the other hand, the pl peak shifts to higher energy in the structures with dislocations. in this case, the misfit dislocations would capture the inas material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these qds. the variations in the pl intensity and linewidth are also discussed.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13264]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Material transport in self-assembled InAs/GaAs quantum dot ensemble[J]. physics of low-dimensional structures,1997,12(0):205-211.
APA	Han PD.(1997).Material transport in self-assembled InAs/GaAs quantum dot ensemble.physics of low-dimensional structures,12(0),205-211.
MLA	Han PD."Material transport in self-assembled InAs/GaAs quantum dot ensemble".physics of low-dimensional structures 12.0(1997):205-211.