Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

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	Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
	Wang HM ; Fan TW ; Wu J ; Zeng YP ; Dong JR ; Kong MY
刊名	journal of crystal growth
	1998
卷号	186 期号:1-2 页码:38-42
关键词	MOLECULAR-BEAM EPITAXY CRITICAL LAYER THICKNESS THREADING DISLOCATIONS OVAL DEFECTS HETEROSTRUCTURES INXGA1-XAS ENERGY SI
ISSN号	0022-0248
通讯作者	wang hm,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	inas layers were grown on gaas by molecular beam epitaxy (mbe) at substrate temperature 450 and 480 degrees c, and the surface morphology was studied with scanning electron microscopy (sem). we have observed a high density of hexagonal deep pits for samples grown at 450 degrees c, however, the samples grown at 480 degrees c have smooth surface. the difference of morphology can be explained by different migration of cations which is temperature dependent. cross-sectional transmission electron microscopy (xtem) studies showed that the growth temperature also affect the distributions of threading dislocations in inas layers because the motion of dislocations is kinetically limited at lower temperature. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13244]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HM,Fan TW,Wu J,et al. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE[J]. journal of crystal growth,1998,186(1-2):38-42.
APA	Wang HM,Fan TW,Wu J,Zeng YP,Dong JR,&Kong MY.(1998).Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE.journal of crystal growth,186(1-2),38-42.
MLA	Wang HM,et al."Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE".journal of crystal growth 186.1-2(1998):38-42.