New method for the growth of highly uniform quantum dots

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	New method for the growth of highly uniform quantum dots
	Pan D ; Zeng YP ; Kong MY
刊名	microelectronic engineering
	1998
卷号	43-44 期号:0 页码:79-83
关键词	self-formed quantum dot Stranski-Krastanow growth mode superlattice INGAAS GAAS DISLOCATIONS MULTILAYERS DEFECTS STRAIN MOLECULAR-BEAM EPITAXY
ISSN号	0167-9317
通讯作者	pan d,chinese acad sci,inst semicond,mat ctr,pob 912,beijing 100083,peoples r china. 电子邮箱地址: dongpan@red.senu.ac.cn
中文摘要	a new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13102]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan D,Zeng YP,Kong MY. New method for the growth of highly uniform quantum dots[J]. microelectronic engineering,1998,43-44(0):79-83.
APA	Pan D,Zeng YP,&Kong MY.(1998).New method for the growth of highly uniform quantum dots.microelectronic engineering,43-44(0),79-83.
MLA	Pan D,et al."New method for the growth of highly uniform quantum dots".microelectronic engineering 43-44.0(1998):79-83.