Photoluminescence properties of nitrogen-doped ZnSe epilayers

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	Photoluminescence properties of nitrogen-doped ZnSe epilayers
	Zhu ZM ; Liu NZ ; Li GH ; Han HX ; Wang ZP ; Wang SZ ; He L ; Ji RB ; Wu Y
刊名	journal of infrared and millimeter waves
	1999
卷号	18 期号:1 页码:13-18
关键词	ZnSe : N photoluminescence hound exciton P-TYPE ZNSE TEMPERATURE-DEPENDENCE LASER-DIODES LUMINESCENCE ACCEPTORS MOLECULAR-BEAM EPITAXY
ISSN号	1001-9014
通讯作者	zhu zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	the photoluminescence (pl) properties of nitrogen-doped znse epilayers grown on semi-insulating gaas(100) substrates by mbe using a rf-plasma source for n doping were investigated. the pl peak which can be related to n acceptor was observed in the pl spectra of znse:n smaples. at 10k, as the excitation power density increases, the energy of donor-acceptor pair(dap) emission shows a blue-shift and its intensity tends to saturate. as the temperature increases over a range from 10k to 300k, the relative pl intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12980]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu ZM,Liu NZ,Li GH,et al. Photoluminescence properties of nitrogen-doped ZnSe epilayers[J]. journal of infrared and millimeter waves,1999,18(1):13-18.
APA	Zhu ZM.,Liu NZ.,Li GH.,Han HX.,Wang ZP.,...&Wu Y.(1999).Photoluminescence properties of nitrogen-doped ZnSe epilayers.journal of infrared and millimeter waves,18(1),13-18.
MLA	Zhu ZM,et al."Photoluminescence properties of nitrogen-doped ZnSe epilayers".journal of infrared and millimeter waves 18.1(1999):13-18.