Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors
	Chen W ; Su MZ
刊名	journal of physics and chemistry of solids
	1999
卷号	60 期号:3 页码:371-378
关键词	colour centres luminescence CENTERS BAFBR-EU-2+ MECHANISM CRYSTALS PHOTOSTIMULATED LUMINESCENCE
ISSN号	0022-3697
通讯作者	chen w,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the photo- and thermo-stimulated luminescence (psl and tsl) of bafcl0.8br0.2:sm2+,sm3+ phosphors were investigated. it is found that the stimulated luminescence intensity of sm2+ is almost equal to that of sm3+ even if the content of sm2+ is much lower than that of sm3+. only the stimulated luminescence of sm2+ is observed in the sample in which the content of sm2+ is much higher than sm3+, demonstrating that the psl or tsl efficiency of sm2+ is much higher than that of sm3+. this is attributed to the effective overlap of the e-h emission with the absorption of sm2+ centers which may make the energy transfer from the electron-hole pairs to sm2+ effectively. in bafcl0.8br0.2:sm2+,sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [sm2+ + h] or [sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (sm2+ and sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. the x-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. the net result of the two processes is quite similar and may be comparable. it is suggested from the observations of stimulated luminescence that electron migration between sm2+ and sm3+ is not the major process, color centers may play an important role in hole burning. the information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (c) 1999 elsevier science ltd. all rights reserved.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12968]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen W,Su MZ. Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors[J]. journal of physics and chemistry of solids,1999,60(3):371-378.
APA	Chen W,&Su MZ.(1999).Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors.journal of physics and chemistry of solids,60(3),371-378.
MLA	Chen W,et al."Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors".journal of physics and chemistry of solids 60.3(1999):371-378.