Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature | |
Jiang DS![]() | |
刊名 | chinese physics letters
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1999 | |
卷号 | 16期号:2页码:143-145 |
关键词 | GAAS-ALAS HETEROSTRUCTURES DOUBLE-BARRIER STRUCTURES SEMICONDUCTOR SUPERLATTICES TRANSPORT |
ISSN号 | 0256-307x |
通讯作者 | wu jq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
中文摘要 | the behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled gaas/alas superlattice (sl) is investigated under hydrostatic pressure. from atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the i-v curve and oscillating characteristics are affected by the pressure. when hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the i-v curve. the plateau disappears when the pressure is close to 13.5 kbar. as the main effect of hydrostatic pressure is to lower the x point valley with respect to gamma point valley, the disappearance of oscillation and the plateau shrinkage before gamma - x resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest gamma - x barrier height in gaas/alas sl structure. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12964] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Jiang DS. Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature[J]. chinese physics letters,1999,16(2):143-145. |
APA | Jiang DS.(1999).Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature.chinese physics letters,16(2),143-145. |
MLA | Jiang DS."Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature".chinese physics letters 16.2(1999):143-145. |
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