Effect of growth interruption on the optical properties of InAs/GaAs quantum dots

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	Effect of growth interruption on the optical properties of InAs/GaAs quantum dots
	Lu ZD ; Xu JZ ; Zheng BZ ; Xu ZY ; Ge WK
刊名	solid state communications
	1999
卷号	109 期号:10 页码:649-653
关键词	semiconductors optical properties luminescence CONFIGURATION LUMINESCENCE WELLS TIME
ISSN号	0038-1098
通讯作者	xu zy,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china.
中文摘要	the effect of growth interruption (gi) on the optical properties of inas/gaas quantum dots was investigated by cw and time-resolved photoluminescence (pl). it is found that this effect depends very much on the growth conditions, in particular, the growth rate. in the case of low growth rate, we have found that the gi may introduce either red-shift or blue-shift in pl with increase of the interruption lime, depending on the inas thickness. the observed red shift in our 1.7 monolayer (ml) sample is attributed to the evolution of the inas islands during the growth interruption. while the blue-shift in the 3 ml sample is suggested to be mainly caused by the strain effect. in addition, nearly zero shift was observed for the sample with thickness around 2.5 ml, (c) 1999 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12956]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu ZD,Xu JZ,Zheng BZ,et al. Effect of growth interruption on the optical properties of InAs/GaAs quantum dots[J]. solid state communications,1999,109(10):649-653.
APA	Lu ZD,Xu JZ,Zheng BZ,Xu ZY,&Ge WK.(1999).Effect of growth interruption on the optical properties of InAs/GaAs quantum dots.solid state communications,109(10),649-653.
MLA	Lu ZD,et al."Effect of growth interruption on the optical properties of InAs/GaAs quantum dots".solid state communications 109.10(1999):649-653.