Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

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	Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure
	Jiang DS
刊名	journal of applied physics
	1999
卷号	85 期号:8 part 1 页码:4259-4261
关键词	GAAS-ALAS SUPERLATTICES CARRIER TRANSPORT OSCILLATIONS DOMAINS STATE
ISSN号	0021-8979
通讯作者	wu jq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	the current-voltage (i-v) characteristics of a doped weakly coupled gaas/alas superlattice (sl) with narrow barriers are measured under hydrostatic pressure from 1 bar to 13.5 kbar at both 77 and 300 k. the experimental results show that, contrary to the results in sl with wide barriers, the plateau in the i-v curve at 77 k does not shrink with increasing pressure, and becomes wider after 10.5 kbar. it is explained by the fact that the e-gamma 1-e-gamma 1 resonance peak is higher than the e-gamma 1-e-x1 resonance peak. at 300 k, however, because of the more important contribution of the nonresonant component to the current, the plateau shrinks with increasing pressure. (c) 1999 american institute of physics. [s0021-8979(99)02008-3].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12942]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure[J]. journal of applied physics,1999,85(8 part 1):4259-4261.
APA	Jiang DS.(1999).Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure.journal of applied physics,85(8 part 1),4259-4261.
MLA	Jiang DS."Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure".journal of applied physics 85.8 part 1(1999):4259-4261.