AlGaInP visible quantum well lasers for information technology

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	AlGaInP visible quantum well lasers for information technology
	Yu JZ ; Chen LH ; Ma XY ; Wang QM
刊名	czechoslovak journal of physics
	1999
卷号	49 期号:5 页码:791-796
关键词	HIGH-POWER OPERATION DIODES
ISSN号	0011-4626
通讯作者	yu jz,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	650 nm-range algainp multi-quantum well (mqw) laser diodes grown by low pressure metal organic chemical vapor deposition (lp-mocvd) have been studied and the results are presented in this paper. threshold current density of broad area contact laser diodes can be as low as 350 a/cm(2). laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) ma and (0.2-0.7) mw/ma, respectively. typical output power for the laser diodes is 5 mw, maximum output power of 15 mw has been obtained. their operation temperature can be up to 90 degrees c under power of 5 mw. after operating under 90 degrees c and 5 mw for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees c and the operation currents at 5 mw (at 25 degrees c) are (2-3) ma and (3-5) ma, respectively. reliability tests showed that no obvious degradation was observed after 1400 hours of cw operation under 50 degrees c and 2.5 mw.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12884]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu JZ,Chen LH,Ma XY,et al. AlGaInP visible quantum well lasers for information technology[J]. czechoslovak journal of physics,1999,49(5):791-796.
APA	Yu JZ,Chen LH,Ma XY,&Wang QM.(1999).AlGaInP visible quantum well lasers for information technology.czechoslovak journal of physics,49(5),791-796.
MLA	Yu JZ,et al."AlGaInP visible quantum well lasers for information technology".czechoslovak journal of physics 49.5(1999):791-796.