The growth of SiC on Si substrates with C2H4 and Si2H6

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	The growth of SiC on Si substrates with C2H4 and Si2H6
	Wang YS ; Li JM ; Lin LY ; Zhang FF
刊名	applied surface science
	1999
卷号	148 期号:3-4 页码:189-195
关键词	Si SiC epitaxial growth RHEED Raman spectrum CHEMICAL-VAPOR-DEPOSITION HETEROEPITAXIAL GROWTH HYDROCARBON RADICALS SILICON SURFACES FILMS LAYER MOLECULAR-BEAM EPITAXY
ISSN号	0169-4332
通讯作者	wang ys,chinese acad sci,inst semicond,novel mat ctr,beijing 100083,peoples r china.
中文摘要	sic was grown on si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of c2h4 and s2h6 at 1050 degrees c. sic formed during removal of oxide could be removed at 1150 degrees c. twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. in sic growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal sic with double-domain (2 x 1) superstructure formed on the oriented substrate. sic single crystal could grow on a carbonized twinned buffer layer. obvious sic lo and to phonon modes were observed with raman spectroscopy in the epilayer grown on the oriented substrate. the surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. the film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12860]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YS,Li JM,Lin LY,et al. The growth of SiC on Si substrates with C2H4 and Si2H6[J]. applied surface science,1999,148(3-4):189-195.
APA	Wang YS,Li JM,Lin LY,&Zhang FF.(1999).The growth of SiC on Si substrates with C2H4 and Si2H6.applied surface science,148(3-4),189-195.
MLA	Wang YS,et al."The growth of SiC on Si substrates with C2H4 and Si2H6".applied surface science 148.3-4(1999):189-195.