Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

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	Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes
	Liu Y ; Xiao XR ; Zeng YP ; Pan D
刊名	journal of physical chemistry b
	1999
卷号	103 期号:47 页码:10421-10424
关键词	MATCHED SUPERLATTICE ELECTRODES PHOTOCURRENT SPECTROSCOPY INTERFACIAL BEHAVIOR SOLAR-CELLS EER SPECTRA PHOTOLUMINESCENCE ELECTRODE/ELECTROLYTE SEMICONDUCTOR TRANSPORT DYNAMICS
ISSN号	1089-5647
通讯作者	xiao xr,chinese acad sci,inst chem,ctr mol sci,lab photochem,beijing 100083,peoples r china.
中文摘要	the photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface in0.15ga0.85as/gaas quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. the photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. these dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12752]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Y,Xiao XR,Zeng YP,et al. Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes[J]. journal of physical chemistry b,1999,103(47):10421-10424.
APA	Liu Y,Xiao XR,Zeng YP,&Pan D.(1999).Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes.journal of physical chemistry b,103(47),10421-10424.
MLA	Liu Y,et al."Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes".journal of physical chemistry b 103.47(1999):10421-10424.