Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers

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	Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers
	Ding K ; Li GH ; Han HX ; Wang ZP
刊名	journal of infrared and millimeter waves
	1999
卷号	18 期号:6 页码:417-422
关键词	nc-Si ion implantation thermal annealing photoluminescence Raman scattering VISIBLE-LIGHT EMISSION THERMAL SIO2-FILMS PHOTOLUMINESCENCE NANOCRYSTALS LUMINESCENCE
ISSN号	1001-9014
通讯作者	ding k,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	the samples of silicon nanocrystals (nc-si) were prepared by si ion implanted into sio2 layers. photoluminescence spectra were measured at room temperature and their dependence on thermal annealing was investigated. the experimental results show that pl peaks originate from the defects in sio2 layers caused by ion implantation when the thermal annealing temperature is lower than 800 c. the pl peak from nc-si was observed when the thermal annealing temperature was higher than 900 c, and pl intensity reached its maximum at the thermal annealing temperature of 1100 c. as the annealing temperature increases the red shift of pl peak from nc-si shows the quantum size effect. the characterized raman scattering peak of nc-si was observed at the right angle scattering configuration for the first time. it provides further support for the pl measurements.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12720]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ding K,Li GH,Han HX,et al. Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers[J]. journal of infrared and millimeter waves,1999,18(6):417-422.
APA	Ding K,Li GH,Han HX,&Wang ZP.(1999).Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers.journal of infrared and millimeter waves,18(6),417-422.
MLA	Ding K,et al."Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers".journal of infrared and millimeter waves 18.6(1999):417-422.