Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

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	Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
	Zhu QS ; Nagai H ; Kawaguchi Y ; Hiramatsu K ; Sawaki N
刊名	journal of vacuum science & technology a
	2000
卷号	18 期号:1 页码:261-267
关键词	P-TYPE GAN DEEP LEVELS
ISSN号	0734-2101
通讯作者	zhu qs,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	deep trap levels in a mg-doped gan grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (dlts). the mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. the dlts spectrum has a dominant peak d-1 with an activation energy of 0.41+/-0.05 ev, accompanied by two additional peaks with activation energies of 0.49+/-0.09 ev (d-2) and 0.59+/-0.05 ev (d-3). it was found that the dominant peak d-1 consists of five peaks, each of which has different activation energy and capture cross section. in order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of dlts signals. it was found that the longer the heat treatment duration is, the lower the amplitude of dlts peaks become. this suggests that the decrease of the dlts signal originates from hydrogen atom outgoing from the film during the annealing process. the possible originality of multiple trap levels was discussed in terms of the mg-n-h complex. (c) 2000 american vacuum society. [s0734-2101(00)01701-2].
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12712]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu QS,Nagai H,Kawaguchi Y,et al. Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy[J]. journal of vacuum science & technology a,2000,18(1):261-267.
APA	Zhu QS,Nagai H,Kawaguchi Y,Hiramatsu K,&Sawaki N.(2000).Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy.journal of vacuum science & technology a,18(1),261-267.
MLA	Zhu QS,et al."Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy".journal of vacuum science & technology a 18.1(2000):261-267.