Steady and transient optical properties of cubic InGaN epilayers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Steady and transient optical properties of cubic InGaN epilayers
	Xu ZY ; Liu BL ; Li SF ; Yang H ; Ge WK
刊名	journal of infrared and millimeter waves
	2000
卷号	19 期号:1 页码:11-14
关键词	InGaN exciton localization time-resolved photoluminescence GAN
ISSN号	1001-9014
通讯作者	xu zy,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	photoluminescence (pl) and time-resolved pi, were employed to study the steady and transient optical properties of cubic inxga1-xn epilayers grown by mbe. the results suggest that the pl transitions in ingan epilayers are mainly from localized exciton states. the localization energies are estimated to be 60 mev, independent of in composition. the pl decay is characterized by a hi-exponential dependence. the fast process (50 ps at 12k) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12k) is attributed to the decay process of localized excitons.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12674]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu ZY,Liu BL,Li SF,et al. Steady and transient optical properties of cubic InGaN epilayers[J]. journal of infrared and millimeter waves,2000,19(1):11-14.
APA	Xu ZY,Liu BL,Li SF,Yang H,&Ge WK.(2000).Steady and transient optical properties of cubic InGaN epilayers.journal of infrared and millimeter waves,19(1),11-14.
MLA	Xu ZY,et al."Steady and transient optical properties of cubic InGaN epilayers".journal of infrared and millimeter waves 19.1(2000):11-14.