Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates

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	Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates
	Sun XL ; Wang YT ; Yang H ; Zheng LX ; Xu DP ; Li JB ; Wang ZG
刊名	journal of applied physics
	2000
卷号	87 期号:8 页码:3711-3714
关键词	PHASE-SEPARATION GAN
ISSN号	0021-8979
通讯作者	sun xl,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	cubic inxga1-xn films were successfully grown on gaas(001) substrates by metalorganic chemical-vapor deposition. the values of x content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (xrd). the perpendicular and parallel elastic strain of the in0.2ga0.8n layer, epsilon(perpendicular to)=0.4% and epsilon(parallel to)=-0.4% for gan and epsilon(perpendicular to)=0.37% and epsilon(parallel to)=-0.37% for ingan, respectively, were derived using the xrd measurements. the inhomogeneous strain and the average grain size of the in0.2ga0.8n/gan films were also studied by xrd. photoluminescence spectra were used to measure the optical characterization of the inxga1-xn thin films with different in composition, and the near-band-edge emission dependence of cubic inxga1-xn on the x value is nearly linear with in content x less than or equal to 0.24. (c) 2000 american institute of physics. [s0021-8979(00)03908-6].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12644]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Wang YT,Yang H,et al. Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates[J]. journal of applied physics,2000,87(8):3711-3714.
APA	Sun XL.,Wang YT.,Yang H.,Zheng LX.,Xu DP.,...&Wang ZG.(2000).Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates.journal of applied physics,87(8),3711-3714.
MLA	Sun XL,et al."Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates".journal of applied physics 87.8(2000):3711-3714.