Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

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	Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate
	Chen Y ; Li GH ; Zhu ZM ; Han HX ; Wang ZP ; Zhou W ; Wang ZG
刊名	applied physics letters
	2000
卷号	76 期号:22 页码:3188-3190
关键词	OPTICAL-PROPERTIES SUPERLATTICES PRESSURE LINEWIDTH INSB GASB
ISSN号	0003-6951
通讯作者	chen y,acad sinica,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we investigated the photoluminescence (pl) of self-assembled in0.55al0.45as/al0.5ga0.5as quantum dots (qds) grown on (311)a gaas substrate. the pl peak at 10 k shifts to lower energy by about 30 mev when the excitation power decreases by two orders of magnitude. it has a red-shift under pressure, that is the character of x-like transition. moreover, its peak energy is smaller than the indirect gap of bulk al0.5ga0.5as and in0.55al0.45as. we then attribute that peak to the type-ii transition between electrons in x valley of al0.5ga0.5as and heavy holes in in0.55al0.45as qds. a new peak appears at the higher energy when temperature is increased above 70 k. it shifts to higher energy with increasing pressure, corresponding to the transition from conduction gamma band to valence band in qds. the measurements demonstrate that our in0.55al0.45as/al0.5ga0.5as quantum dots are type-ii qds with x-like conduction-band minimum. to interpret the second x-related peak emerged under pressure, we discuss the x-valley split in qds briefly. (c) 2000 american institute of physics. [s0003-6951(00)04622-2].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12596]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Y,Li GH,Zhu ZM,et al. Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate[J]. applied physics letters,2000,76(22):3188-3190.
APA	Chen Y.,Li GH.,Zhu ZM.,Han HX.,Wang ZP.,...&Wang ZG.(2000).Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate.applied physics letters,76(22),3188-3190.
MLA	Chen Y,et al."Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate".applied physics letters 76.22(2000):3188-3190.