New progress of studies on semiconductor materials

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	New progress of studies on semiconductor materials
	Wang ZG
刊名	rare metal materials and engineering
	2000
卷号	29 期号:0 页码:17-21
关键词	semiconductor material progress prospect
ISSN号	1002-185x
通讯作者	wang zg,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	this paper is a review of research and development on semiconductor materials, which covers main scientific activities in this field. the present status acid future prospects of studies on semiconductor materials, such as silicon crystals, gaas related iii-v compound semiconductor materials and gaas, inp and silicon based quantum well and superlattice materials, quantum wires and quantum dots materials, microcavity and photonic crystals, materials for quantum computation and wide band gap materials, are briefly discussed.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12452]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang ZG. New progress of studies on semiconductor materials[J]. rare metal materials and engineering,2000,29(0):17-21.
APA	Wang ZG.(2000).New progress of studies on semiconductor materials.rare metal materials and engineering,29(0),17-21.
MLA	Wang ZG."New progress of studies on semiconductor materials".rare metal materials and engineering 29.0(2000):17-21.