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	Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by \SiO2-Based Solid Electrolyte.
	Jiang, J; Sun, J; Lu, AX; Wan, Q
刊名	IEEE Transactions on Electron Devices
	2011
卷号	Vol.58 No.2页码:547-552
ISSN号	0018-9383
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6514656
专题	湖南大学
作者单位	1.Hunan Univ, Sch Phys & Microelect, Changsha 410082, Hunan, Peoples R China   增强组织信息的名称     Hunan University 2.Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China   增强组织信息的名称     Hunan University 3.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China   增强组织信息的名称     Ningbo Institute of Materials Technology and Engineering, CAS     Chinese Academy of Sciences
推荐引用方式 GB/T 7714	Jiang, J,Sun, J,Lu, AX,et al. Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by \SiO2-Based Solid Electrolyte.[J]. IEEE Transactions on Electron Devices,2011,Vol.58 No.2:547-552.
APA	Jiang, J,Sun, J,Lu, AX,&Wan, Q.(2011).Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by \SiO2-Based Solid Electrolyte..IEEE Transactions on Electron Devices,Vol.58 No.2,547-552.
MLA	Jiang, J,et al."Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by \SiO2-Based Solid Electrolyte.".IEEE Transactions on Electron Devices Vol.58 No.2(2011):547-552.

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