The formation and stability of Si1-xCx alloys in Si implanted with carbon

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	The formation and stability of Si1-xCx alloys in Si implanted with carbon
	Wang YS ; Li JM ; Jin YF ; Wang YT ; Sun GS ; Lin LY
刊名	chinese science bulletin
	2001
卷号	46 期号:3 页码:200-204
关键词	ion implantation Si1-xCx alloys stability of Si1-xCx alloys SI1-YCY
ISSN号	1001-6538
通讯作者	wang ys,beijing normal univ,dept phys,beijing 100875,peoples r china.
中文摘要	si1-xcx alloys of carbon (c) concentration between 0.6%-1.0% were grown in si by ion implantation and high temperature annealing. the formation of si1-xcx alloys under different ion doses and their stability during annealing were studied. if the implanted dose was less than that for amorphizing si crystals, the implanted c atoms would like to combine with defects produced during implantation and it was difficult to form si1-xcx alloys after being annealed at 850 degreesc. with the increment of implanted c ion doses, the lattice damage increased and it was easier to form si1-xcx alloys. but the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form si1-xcx alloys as the implanted carbon dose increased to a certain degree. once si1-xcx alloys were formed, they were stable at 950 degreesc, but part of their strain would release as the annealing temperature increased to 1 000 degreesc. stability of the alloys became worse with the increment of carbon concentration in the alloys.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12292]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YS,Li JM,Jin YF,et al. The formation and stability of Si1-xCx alloys in Si implanted with carbon[J]. chinese science bulletin,2001,46(3):200-204.
APA	Wang YS,Li JM,Jin YF,Wang YT,Sun GS,&Lin LY.(2001).The formation and stability of Si1-xCx alloys in Si implanted with carbon.chinese science bulletin,46(3),200-204.
MLA	Wang YS,et al."The formation and stability of Si1-xCx alloys in Si implanted with carbon".chinese science bulletin 46.3(2001):200-204.