X-ray evidence for Ge/Si(001) island columns in multilayer structure

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	X-ray evidence for Ge/Si(001) island columns in multilayer structure
	Huang CJ ; Tang Y ; Li DZ ; Cheng BW ; Luo LP ; Yu JZ ; Wang QM
刊名	journal of crystal growth
	2001
卷号	223 期号:1-2 页码:99-103
关键词	X-ray diffraction island columns vapor phase epitaxy Ge islands nanomaterials GROWTH GE SUPERLATTICES ORGANIZATION LAYERS DOTS
ISSN号	0022-0248
通讯作者	huang cj,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. 电子邮箱地址: cjhuang@red.semi.ac.cn
中文摘要	a ge/si(0 0 1) multilayer structure is investigated by cross-sectional transmission electron microscopy, atomic force microscopy and double crystal x-lay diffraction. we find that the multilayer-structure-related satellite peaks in the rocking curve exhibit a similar nonuniform broadening and rye fit the zero-order peak with two lorentz lineshapes. the ratio of the integrated intensity of two peaks is approximately equal with the anal ratio of the top ge layer deposited between the areas that are and are not occupied by islands. it proves the existence of vertical-aligned island columns from the viewpoint of macroscopic dimension. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12274]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang CJ,Tang Y,Li DZ,et al. X-ray evidence for Ge/Si(001) island columns in multilayer structure[J]. journal of crystal growth,2001,223(1-2):99-103.
APA	Huang CJ.,Tang Y.,Li DZ.,Cheng BW.,Luo LP.,...&Wang QM.(2001).X-ray evidence for Ge/Si(001) island columns in multilayer structure.journal of crystal growth,223(1-2),99-103.
MLA	Huang CJ,et al."X-ray evidence for Ge/Si(001) island columns in multilayer structure".journal of crystal growth 223.1-2(2001):99-103.