Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

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	Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices
	Jiang DS
刊名	semiconductor science and technology
	2001
卷号	16 期号:4 页码:239-242
关键词	GAAS-ALAS SUPERLATTICES ELECTRIC-FIELD DOMAINS
ISSN号	0268-1242
通讯作者	li cy,chinese acad sci,inst semicond,nlsm,pob 912,beijing 100083,peoples r china.
中文摘要	we observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. the current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (v(f)), as the peak-valley ratio in the v(f) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. the simulated calculation, which takes the difference in v(f) curves into consideration, gives a good agreement with the experimental results.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12244]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices[J]. semiconductor science and technology,2001,16(4):239-242.
APA	Jiang DS.(2001).Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices.semiconductor science and technology,16(4),239-242.
MLA	Jiang DS."Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices".semiconductor science and technology 16.4(2001):239-242.