Shape evolution of Ge/Si(001) islands induced by strain-driven alloying

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	Shape evolution of Ge/Si(001) islands induced by strain-driven alloying
	Huang CJ ; Zuo YH ; Li DZ ; Cheng BW ; Luo LP ; Yu JZ ; Wang QM
刊名	applied physics letters
	2001
卷号	78 期号:24 页码:3881-3883
关键词	TEMPERATURE-DEPENDENCE TRANSITION GROWTH GE SI(001) PATHWAY
ISSN号	0003-6951
通讯作者	zuo yh,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	the shape evolution of ge/si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. we find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. while at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. the presence of the atomic intermixing between the ge islands and si substrate at high deposition rate is responsible for the reverse evolution. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12206]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang CJ,Zuo YH,Li DZ,et al. Shape evolution of Ge/Si(001) islands induced by strain-driven alloying[J]. applied physics letters,2001,78(24):3881-3883.
APA	Huang CJ.,Zuo YH.,Li DZ.,Cheng BW.,Luo LP.,...&Wang QM.(2001).Shape evolution of Ge/Si(001) islands induced by strain-driven alloying.applied physics letters,78(24),3881-3883.
MLA	Huang CJ,et al."Shape evolution of Ge/Si(001) islands induced by strain-driven alloying".applied physics letters 78.24(2001):3881-3883.