Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells
	Tan PH
刊名	semiconductor science and technology
	2001
卷号	16 期号:10 页码:822-825
关键词	RESONANT-TUNNELING DIODES DOTS HOLES
ISSN号	0268-1242
通讯作者	tang y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we have investigated the photo-excited capacitance-voltage (c-v) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (qw) embedded in an n(+)-i-n(+) double-barrier structure. the pronounced peak feature at zero bias in the c-v spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the qw. this fact is further demonstrated through the comparison between the c-v curve with the pl intensity versus applied voltage relationship under the same excitation. the results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12078]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells[J]. semiconductor science and technology,2001,16(10):822-825.
APA	Tan PH.(2001).Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells.semiconductor science and technology,16(10),822-825.
MLA	Tan PH."Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells".semiconductor science and technology 16.10(2001):822-825.