Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

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	Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
	Leung BH ; Chan NH ; Fong WK ; Zhu CF ; Ng SW ; Lui HF ; Tong KY ; Surya C ; Lu LW ; Ge WK
刊名	ieee transactions on electron devices
	2002
卷号	49 期号:2 页码:314-318
关键词	deep level transient Fourier spectroscopy (DLTFS) gallium nitride (GaN) intermediate-temperature buffer layer (ITBF) low-frequency noise RESONANT-TUNNELING DIODES GENERATION-RECOMBINATION NOISE RANDOM-TELEGRAPH NOISE ULTRAVIOLET PHOTODETECTORS DEVICES
ISSN号	0018-9383
通讯作者	leung bh,hong kong polytech univ,dept elect & informat engn,hong kong,hong kong,peoples r china.
中文摘要	gallium nitride (gan)-based schottky junctions were fabricated by rf-plasma-assisted molecular beam epitaxy (mbe). the gan epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (ltbl) grown at 500 degreesc and an intermediate-temperature buffer layer (itbl) deposited at 690 degreesc. low-frequency excess noise and deep level transient fourier spectroscopy (dltfs) were measured from the devices. the results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the gan films grown with an itbl. compared to the control sample, which was grown with just a conventional ltbl, a three-order-of-magnitude reduction in the deep levels 0.4 ev below the conduction band minimum (ec) is observed in the bulk of the thin films using dltfs measurements.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11994]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Leung BH,Chan NH,Fong WK,et al. Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers[J]. ieee transactions on electron devices,2002,49(2):314-318.
APA	Leung BH.,Chan NH.,Fong WK.,Zhu CF.,Ng SW.,...&Ge WK.(2002).Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers.ieee transactions on electron devices,49(2),314-318.
MLA	Leung BH,et al."Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers".ieee transactions on electron devices 49.2(2002):314-318.