Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Ling CC ; Mui WK ; Lam CH ; Beling CD ; Fung S ; Lui MK ; Cheah KW ; Li KF ; Zhao YW ; Gong M
刊名applied physics letters
2002
卷号80期号:21页码:3934-3936
关键词ANTIMONIDE
ISSN号0003-6951
通讯作者ling cc,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. 电子邮箱地址: ccling@hku.hk
中文摘要positron lifetime, photoluminescence (pl), and hall measurements were performed to study undoped p-type gallium antimonide materials. a 314 ps positron lifetime component was attributed to ga vacancy (v-ga) related defect. isochronal annealing studies showed at 300 degreesc annealing, the 314 ps positron lifetime component and the two observed pl signals (777 and 797 mev) disappeared, which gave clear and strong evidence for their correlation. however, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. although the residual acceptor is generally related to the v-ga defect, at least for cases with annealing temperatures above 300 degreesc, v-ga is not the acceptor responsible for the p-type conduction. (c) 2002 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11910]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Ling CC,Mui WK,Lam CH,et al. Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. applied physics letters,2002,80(21):3934-3936.
APA Ling CC.,Mui WK.,Lam CH.,Beling CD.,Fung S.,...&Gong M.(2002).Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.applied physics letters,80(21),3934-3936.
MLA Ling CC,et al."Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".applied physics letters 80.21(2002):3934-3936.
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