Modulation spectroscopy of GaAs covered by InAs quantum dots

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	Modulation spectroscopy of GaAs covered by InAs quantum dots
	Xu B; Jin P; Li CM
刊名	chinese physics letters
	2002
卷号	19 期号:7 页码:1010-1012
关键词	FRANZ-KELDYSH OSCILLATIONS MICROSCOPY SURFACES ISLANDS LAYER
ISSN号	0256-307x
通讯作者	jin p,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	contactless: electroreflectance has been employed at room temperature to study the fermi level pinning at undoped-n(+) gaas surfaces covered by 1.6 and 1.8 monolayer (ml) inas quantum dots (qds). it is shown that the 1.8 ml inas qd moves the fermi level at gaas surface to the valence band maximum by about 70 mev compared to bare gaas, whereas 1.6 ml inas on gaas does not modify the fermi level, it is confirmed that the modification of the 1.8 ml inas deposition on the fermi level at gaas surface is due to the qds, which are surrounded by some oxidized inas facets, rather than the wetting layer.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11838]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Jin P,Li CM. Modulation spectroscopy of GaAs covered by InAs quantum dots[J]. chinese physics letters,2002,19(7):1010-1012.
APA	Xu B,Jin P,&Li CM.(2002).Modulation spectroscopy of GaAs covered by InAs quantum dots.chinese physics letters,19(7),1010-1012.
MLA	Xu B,et al."Modulation spectroscopy of GaAs covered by InAs quantum dots".chinese physics letters 19.7(2002):1010-1012.