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	Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states
	Wu Xue-Ke; Huang Wei-Qi; Dong Tai-Ge; Wang Gang; Liu Shi-Rong; Qin Chao-Jie
	2016
卷号	65期号:10
URL标识	查看原文
WOS记录号	WOS:000380363900014
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6488502
专题	贵州大学
作者单位	1.[1]Guizhou Univ, Coll Big Data & Informat Engn, Guiyang 550025, Peoples R China 2.[2]Guizhou Univ, Inst Nanophoton Phys, Guiyang 550025, Peoples R China 3.[3]Chinese Acad Sci, State Key Lab Ore Deposit Geochem, Inst Geochem, Guiyang 550003, Peoples R China 4.[4]Kaili Univ, Coll Phys & Elect Engn, Kaili 556011, Peoples R China
推荐引用方式 GB/T 7714	Wu Xue-Ke,Huang Wei-Qi,Dong Tai-Ge,et al. Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states[J],2016,65(10).
APA	Wu Xue-Ke,Huang Wei-Qi,Dong Tai-Ge,Wang Gang,Liu Shi-Rong,&Qin Chao-Jie.(2016).Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states.,65(10).
MLA	Wu Xue-Ke,et al."Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states".65.10(2016).

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