A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM
	Zhu SQ ; Rau EI ; Yang FH
刊名	semiconductor science and technology
	2003
卷号	18 期号:4 页码:361-366
关键词	SURFACE RECOMBINATION VELOCITY DIFFUSION LENGTH LINE SCAN EXTRACTION
ISSN号	0268-1242
通讯作者	zhu sq,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	we present a novel method for determining semiconductor parameters such as diffusion length l, lifetime tau and surface recombination velocity s of minority carriers by employing scanning electron microscopy (sem). this new method is applicable to both electron beam induced current (ebic and surface electron beam induced voltage (sebiv) modes in sem. the quantitative descriptions for ebic and sebiv signals are derived. the parameters l, s and tau can be directly extracted from the expressions for ebic or sebiv signals and their relaxation characteristics in experiment. as an example, the values of l, s and tau for n-p junction and p-si crystal are determined by using the novel method in ebic or sebiv mode. the carrier diffusion length of a p-si crystal is determined to be 8.74 mum in sebiv mode. it is very close to the normal diffusion length of 7.41 mum of this sample. the novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. especially, the sebiv mode in sem shows great potential for investigating semiconductor structures nondestructively.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11568]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu SQ,Rau EI,Yang FH. A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM[J]. semiconductor science and technology,2003,18(4):361-366.
APA	Zhu SQ,Rau EI,&Yang FH.(2003).A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM.semiconductor science and technology,18(4),361-366.
MLA	Zhu SQ,et al."A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM".semiconductor science and technology 18.4(2003):361-366.