The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
	Xu B; Jin P; Li CM; Ye XL
刊名	journal of crystal growth
	2003
卷号	253 期号:1-4 页码:59-63
关键词	low dimensional structures nanostructures quantum dots molecular beam epitaxy semiconducting III-V materials laser diode TIME-RESOLVED PHOTOLUMINESCENCE
ISSN号	0022-0248
通讯作者	zhang zy,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	we have studied how the optical properties of inas self-assembled quantum dots (qds) grown on gaas substrate are affected when depositing an inalas/ingaas combination overgrowth layer directly on it by rapid thermal annealing (rta). the photoluminescence measurement demonstrated that the inas qds experiences an abnormal variation during the course of rta. the model of transformation of inas-inalas-ingaalas could be used to well explain the phenomena. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11544]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Jin P,Li CM,et al. The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing[J]. journal of crystal growth,2003,253(1-4):59-63.
APA	Xu B,Jin P,Li CM,&Ye XL.(2003).The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing.journal of crystal growth,253(1-4),59-63.
MLA	Xu B,et al."The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing".journal of crystal growth 253.1-4(2003):59-63.