RBS/channeling study and photoluminscence properties of Er-implanted GaN

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	RBS/channeling study and photoluminscence properties of Er-implanted GaN
	Song SF ; Zhou SQ ; Chen WD ; Zhu JJ ; Chen CY ; Xu ZJ
刊名	acta physica sinica
	2003
卷号	52 期号:10 页码:2558-2562
关键词	GaN erbium Raman back scattering photoluminscence DOPED GAN ERBIUM PHOTOLUMINESCENCE ELECTROLUMINESCENCE
ISSN号	1000-3290
通讯作者	song sf,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	the raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice location of the er-implanted gan samples. a better damage recovery was observed with increasing annealing temperature below 1000degreesc, but a complete recovery of the implantation damage cannot be achieved. for a sample annealed for at 900degreesc 30 min the er and ga angular scans across the <0001> axis was measured indicating that about 76% of er ions occupies substitutional sites. moreover, the photoluminscence (pl) properties of er-implanted gan thin films have been also studied. the experimental results indicate that those samples annealed at a higher temperature below 1000degreesc had a stronger 1539nm pl intensity. the thermal quenching of pl intensity for samples annealed at 900degreesc measured at temperatures from 15k to 300k is 30%.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11434]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song SF,Zhou SQ,Chen WD,et al. RBS/channeling study and photoluminscence properties of Er-implanted GaN[J]. acta physica sinica,2003,52(10):2558-2562.
APA	Song SF,Zhou SQ,Chen WD,Zhu JJ,Chen CY,&Xu ZJ.(2003).RBS/channeling study and photoluminscence properties of Er-implanted GaN.acta physica sinica,52(10),2558-2562.
MLA	Song SF,et al."RBS/channeling study and photoluminscence properties of Er-implanted GaN".acta physica sinica 52.10(2003):2558-2562.