Recombination property of nitrogen-acceptor-bound states in ZnO

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Recombination property of nitrogen-acceptor-bound states in ZnO
	Yang XD ; Xu ZY ; Sun Z ; Sun BQ ; Ding L ; Wang FZ ; Ye ZZ
刊名	journal of applied physics
	2006
卷号	99 期号:4 页码:art.no.046101
关键词	MOLECULAR-BEAM EPITAXY P-TYPE ZNO OPTICAL-PROPERTIES EXCITON FORMATION PHOTOLUMINESCENCE FILMS SPECTROSCOPY DYNAMICS IMPURITY ENERGY
ISSN号	0021-8979
通讯作者	yang, xd, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: young@red.semi.ac.cn
中文摘要	the recombination property of nitrogen (n)-related acceptor-bound states in zno has been investigated by photoluminescence (pl), time-resolved pl, and selective pl. several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large coulomb interaction. it is strongly suggested that bound exciton emission dominates the recombination process related to the n acceptor. the recombination lifetime is 750 ps and the binding energy is 67 mev for n-acceptor-bound exciton at low temperature. (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10812]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang XD,Xu ZY,Sun Z,et al. Recombination property of nitrogen-acceptor-bound states in ZnO[J]. journal of applied physics,2006,99(4):art.no.046101.
APA	Yang XD.,Xu ZY.,Sun Z.,Sun BQ.,Ding L.,...&Ye ZZ.(2006).Recombination property of nitrogen-acceptor-bound states in ZnO.journal of applied physics,99(4),art.no.046101.
MLA	Yang XD,et al."Recombination property of nitrogen-acceptor-bound states in ZnO".journal of applied physics 99.4(2006):art.no.046101.