High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

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	High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)
	Ye XL; Jin P
刊名	applied physics letters
	2006
卷号	88 期号:12 页码:art.no.123104
关键词	NANOWIRES THRESHOLD WELLS INP
ISSN号	0003-6951
通讯作者	wang, yl, beijing tongmei xtal technol co ltd, dept res & dev, beijing tongzhou ind dev zone, beijing 101113, peoples r china. e-mail: wangyli@red.semi.ac.cn
中文摘要	highly uniform inas quantum wires (qwrs) have been obtained on the in0.5al0.5as buffer layer grown on the inp substrate 8 degrees off (001) towards (111) by molecular-beam epitaxy. the quasi-periodic composition modulation was spontaneously formed in the in0.5al0.5as buffer layer on this misoriented inp (001). the width and period of the in-rich bands are about 10 and 40 nm, respectively. the periodic in-rich bands play a major role in the sequent inas qwrs growth and the inas qwrs are well positioned atop in-rich bands. the photoluminescence (pl) measurements showed a significant reduction in full width at half maximum and enhanced pl efficiency for inas qwrs on misoriented inp(001) as compared to that on normal inp(001). (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10772]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Jin P. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)[J]. applied physics letters,2006,88(12):art.no.123104.
APA	Ye XL,&Jin P.(2006).High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001).applied physics letters,88(12),art.no.123104.
MLA	Ye XL,et al."High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)".applied physics letters 88.12(2006):art.no.123104.