Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well | |
Zhou WZ ; Yao W ; Zhu B ; Qiu ZJ ; Guo SL ; Lin T ; Cui LJ ; Gui YS ; Chu JH | |
刊名 | acta physica sinica |
2006 | |
卷号 | 55期号:4页码:2044-2048 |
关键词 | InAlAs/InGaAs single quantum well SdH oscillation two-dimensional electron gas magneto-intersubband scattenng ALLOY SCATTERING HETEROJUNCTIONS HEMTS OSCILLATIONS TRANSPORT |
ISSN号 | 1000-3290 |
通讯作者 | zhou, wz, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. e-mail: zhouwz@mail.sitp.ac.cn |
中文摘要 | magneto-transport measurements have been carried out on a si heavily delta-doped in0.52al0.48as/in(0.53)g(0.47)as single quantum well in the temperature range between 1.5 and 60 k under magnetic field up to 10 t. we studied the shubnikov-de haas(sdh) effect and the hall effect for the in0.52al0.48as/in(0.53)g(0.47)as single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. the electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the sdh oscillation. from fast fourier transform analysis for d(2)rho/db(2)-1/b, it is observed that there is a frequency of f(1)-f(2) insensitive to the temperature, besides the frequencies f(1), f(2) for the two subbands and the frequency doubling 2f(1), both dependent on the temperature. this is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2010-04-11 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10746] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhou WZ,Yao W,Zhu B,et al. Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well[J]. acta physica sinica,2006,55(4):2044-2048. |
APA | Zhou WZ.,Yao W.,Zhu B.,Qiu ZJ.,Guo SL.,...&Chu JH.(2006).Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well.acta physica sinica,55(4),2044-2048. |
MLA | Zhou WZ,et al."Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well".acta physica sinica 55.4(2006):2044-2048. |
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