MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission | |
Pan JQ | |
刊名 | semiconductor science and technology |
2006 | |
卷号 | 21期号:6页码:734-739 |
关键词 | VAPOR-PHASE EPITAXY MONOLITHIC INTEGRATION SELECTIVE GROWTH LAYERS DIODE MOVPE |
ISSN号 | 0268-1242 |
通讯作者 | zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, pob 912, beijing 100083, peoples r china. e-mail: qzhao@red.semi.ac.cn |
中文摘要 | details of the design, fabrication and testing of a strained ingaasp/ingaasp multiple quantum well (mqw) electroabsorption modulator (eam) monolithically integrated with a dfb laser by ultra-low-pressure selective area growth (sag) are presented. the method greatly simplifies the integration process. a study of the controllability of band-gap energy by sag has been performed. after being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 gb s(-1) nonreturn to zero (nrz) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 db dynamic extinction ratio. a receiver sensitivity of -18.9 dbm at a bit error rate (ber) of 10(-10) is confirmed. 10 ghz short pulse trains with 15.3 ps pulsewidth have also been generated. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10574] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Pan JQ. MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission[J]. semiconductor science and technology,2006,21(6):734-739. |
APA | Pan JQ.(2006).MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission.semiconductor science and technology,21(6),734-739. |
MLA | Pan JQ."MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission".semiconductor science and technology 21.6(2006):734-739. |
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