High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers
	Liu JQ (Liu Jun-Qi) ; Liu FQ (Liu Feng-Qi) ; Li L (Li Lu) ; Shao Y (Shao Ye) ; Guo Y (Guo Yu) ; Wang ZG (Wang Zhan-Guo)
刊名	chinese physics letters
	2006
卷号	23 期号:7 页码:1784-1786
关键词	CONTINUOUS-WAVE OPERATION HIGH-TEMPERATURE OPERATION MU-M ROOM-TEMPERATURE
ISSN号	0256-307x
通讯作者	liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: fqliu@red.semi.ac.cn
中文摘要	we report on the realization of gaas/algaas quantum cascade lasers with an emission wavelength of 9.1 mu m above the liquid nitrogen temperature. with optimal current injection window and ridge width of 24 and 60 mu m respectively, a peak output power more than 500 mw is achieved in pulsed mode operation. a low threshold current density j(th) = 2.6 ka/cm(2) gives the devices good lasing characteristics. in a drive frequency of 1 khz, the laser operates up to 20% duty cycle.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10504]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JQ ,Liu FQ ,Li L ,et al. High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers[J]. chinese physics letters,2006,23(7):1784-1786.
APA	Liu JQ ,Liu FQ ,Li L ,Shao Y ,Guo Y ,&Wang ZG .(2006).High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers.chinese physics letters,23(7),1784-1786.
MLA	Liu JQ ,et al."High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers".chinese physics letters 23.7(2006):1784-1786.