Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells
Sun Z (Sun Zheng) ; Wang BR (Wang Bao-Rui) ; Xu ZY (Xu Zhong-Ying) ; Sun BQ (Sun Bao-Quan) ; Ji Y (Ji Yang) ; Ni HQ (Ni Hai-Qiao) ; Niu ZC (Niu Zhi-Chuan)
刊名chinese physics letters
2006
卷号23期号:9页码:2566-2569
关键词TIME-RESOLVED PHOTOLUMINESCENCE MOLECULAR-BEAM EPITAXY GAASN ALLOYS
ISSN号0256-307x
通讯作者sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: sz3288@red.semi.ac.cn
中文摘要the nonradiative recombination effect on carrier dynamics in gainnas/gaas quantum wells is studied by time-resolved photoluminescence (trpl) and polarization-dependent trpl at various excitation intensities. it is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. under moderate excitation intensities the pl decay curves exhibit unusual non-exponential behaviour. this result is well stimulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. in the spin dynamics study, the spin relaxation also shows strong excitation power dependence. under the high excitation power an increase of spin polarization degree with time is observed. this new finding provides a useful hint that the spin process can be controlled by excitation power in gainnas systems.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/10420]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Sun Z ,Wang BR ,Xu ZY ,et al. Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells[J]. chinese physics letters,2006,23(9):2566-2569.
APA Sun Z .,Wang BR .,Xu ZY .,Sun BQ .,Ji Y .,...&Niu ZC .(2006).Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells.chinese physics letters,23(9),2566-2569.
MLA Sun Z ,et al."Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells".chinese physics letters 23.9(2006):2566-2569.
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